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IPU60R1K4C6AKMA1

IPU60R1K4C6AKMA1

PFET, 600V, 1.4OHM, 1-ELEMENT, N

IPU60R1K4C6AKMA1

IPU60R1K4C6AKMA1

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Part No :

IPU60R1K4C6AKMA1

Manufacturer
Rochester Electronics
Description
PFET, 600V, 1.4OHM, 1-ELEMENT, N
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
PDF
IPU60R1K4C6AKMA1 PDF
Type Description
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU60R1K4C6AKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU60R1K4C6AKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU60R1K4C6AKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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