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SISS92DN-T1-GE3

SISS92DN-T1-GE3

MOSFET N-CH 250V 3.4A/12.3A PPAK

SISS92DN-T1-GE3

SISS92DN-T1-GE3

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Part No :

SISS92DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 250V 3.4A/12.3A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
471847 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 05 - Feb 09 2025
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 125 V
FET Feature:-
Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
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