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NTD4979N-35G

NTD4979N-35G

MOSFET N-CH 30V 9.4A/41A I-PAK

NTD4979N-35G

NTD4979N-35G

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Part No :

NTD4979N-35G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 9.4A/41A I-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
451845 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
NTD4979N-35G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:837 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.38W (Ta), 26.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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