MOSFET N-CH 650V 4A TO220
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 455 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 80W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDZ493PRochester Electronics |
MOSFET P-CH 20V 4.6A 9BGA |
|
FK8V03030LPanasonic |
MOSFET N CH 33V 12A WMINI8 |
|
BUK7523-75A,127Rochester Electronics |
MOSFET N-CH 75V 53A TO220AB |
|
FDZ193PRochester Electronics |
MOSFET P-CH 20V 3A 6WLCSP |
|
BUK98180-100A/CU115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLZ34NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A D2PAK |
|
SSM3K123TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 4.2A UFM |
|
AUIRLR024NTRLRochester Electronics |
PFET, 17A I(D), 55V, 0.08OHM, 1- |
|
PSMN070-200B,118Rochester Electronics |
MOSFET N-CH 200V 35A D2PAK |
|
IPP015N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO220-3 |
|
AO4494Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 30V 18A 8SOIC |
|
IXTP300N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 300A TO220AB |
|
STB18NF30STMicroelectronics |
MOSFET N-CH 330V 18A D2PAK |