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IPP015N04NGXKSA1

IPP015N04NGXKSA1

MOSFET N-CH 40V 120A TO220-3

IPP015N04NGXKSA1

IPP015N04NGXKSA1

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Part No :

IPP015N04NGXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 120A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10213 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
PDF
IPP015N04NGXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20000 pF @ 20 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP015N04NGXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP015N04NGXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP015N04NGXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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