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SSM3K123TU,LF

SSM3K123TU,LF

MOSFET N-CH 20V 4.2A UFM

Q2-F2XYG-1/2-08-MS100FT

Q2-F2XYG-1/2-08-MS100FT

HEATSHRINK 1/2"-100' YLLW/GREEN

SSM3K123TU,LF

SSM3K123TU,LF

Image is for reference, please contact us to get the real picture

Part No :

SSM3K123TU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 20V 4.2A UFM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20912 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SSM3K123TU,LF PDF
Type Description
Series:U-MOSIII
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
Rds On (Max) @ Id, Vgs:28mOhm @ 3A, 4V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:13.6 nC @ 4 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UFM
Package / Case:3-SMD, Flat Lead
SSM3K123TU,LF is available at GangBo-ic.com, Please review product page below for detailed information, including SSM3K123TU,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SSM3K123TU,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

Phone: 00852-52612101

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