MOSFET N-CH 650V 22A TO220
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 160mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2310 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 390W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
LND250K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 13MA SOT23 |
|
FDJ129PRochester Electronics |
MOSFET P-CH 20V 4.2A SC75-6 FLMP |
|
APT5014BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 35A TO247 |
|
SIHF12N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 12A TO220 |
|
STW8NK80ZSTMicroelectronics |
MOSFET N-CH 800V 6.2A TO247-3 |
|
NTH027N65S3F-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
DMN2055U-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.8A SOT23 T&R 1 |
|
FCP36N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 36A TO220-3 |
|
UF3C065080K3SUnitedSiC |
MOSFET N-CH 650V 31A TO247-3 |
|
FDD6682_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW65R095C7Rochester Electronics |
MOSFET N-CH 650V 24A TO247 |
|
GKI03061Sanken Electric Co., Ltd. |
MOSFET N-CH 30V 14A 8DFN |
|
IPD50R2K0CERochester Electronics |
IPD50R2K0 - 500V COOLMOS N-CHANN |