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MMSF3P02HDR2SG

MMSF3P02HDR2SG

MOSFET P-CH 20V 5.6A 8-SOIC

MMSF3P02HDR2SG

MMSF3P02HDR2SG

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Part No :

MMSF3P02HDR2SG

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 5.6A 8-SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.4 pF @ 16 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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