MOSFET N-CH 650V 10A ITO220S
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1650 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ITO-220S |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSP126,115Nexperia |
MOSFET N-CH 250V 375MA SOT223 |
|
DMN1019USN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 9.3A SC59 |
|
SI8817DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
IRF7779L2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 375A DIRECTFET |
|
TSM033NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 21A/121A 8PDFN |
|
US5U29TRROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT5 |
|
NVMFS5C466NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A/52A 5DFN |
|
IPD50N06S2L13ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 50A TO252-31 |
|
DMN3026LVTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.6A TSOT26 |
|
SI3499DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 5.3A 6TSOP |
|
IPB027N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
2SK4088LS-1ERochester Electronics |
MOSFET N-CH 650V 7.5A TO220F-3FS |
|
RQ6E040XNTCRROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT6 |