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P1166.682NLT

P1166.682NLT

FIXED IND 6.8UH 2.1A 40 MOHM SMD

DMN1019USN-7

DMN1019USN-7

MOSFET N-CH 12V 9.3A SC59

430710-21-0

430710-21-0

CONN BARRIER STRP 21CIRC 0.438"

DMN1019USN-7

DMN1019USN-7

Image is for reference, please contact us to get the real picture

Part No :

DMN1019USN-7

Manufacturer
Zetex Semiconductors (Diodes Inc.)
Description
MOSFET N-CH 12V 9.3A SC59
Catalog
Transistors - FETs, MOSFETs - Single
Availability
838123000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
DMN1019USN-7 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 2.5V
Rds On (Max) @ Id, Vgs:10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50.6 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2426 pF @ 10 V
FET Feature:-
Power Dissipation (Max):680mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-59
Package / Case:TO-236-3, SC-59, SOT-23-3
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