MOSFET N-CH 40V 60A LFPAK33
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1322 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 59W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK33 |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD105N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 80A DPAK |
|
MCQ4406-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 10A 8SOP |
|
TSM60NB380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 9.5A TO251 |
|
IRFZ14PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
IPD65R600C6BTMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
IRFU5305PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A IPAK |
|
IPB020N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
FDB2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |
|
SI7370ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
|
SI4435DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
|
STL6N2VH5STMicroelectronics |
MOSFET N-CH 20V POWERFLAT |
|
AOT296LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 9.5A/70A TO220 |
|
NDS336PRochester Electronics |
MOSFET P-CH 20V 1.2A SUPERSOT3 |