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IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

MOSFET N-CH 100V 120A TO263-3

IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

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Part No :

IPB020N10N5LFATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 120A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
911091 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
IPB020N10N5LFATMA1 PDF
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 50 V
FET Feature:-
Power Dissipation (Max):313W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB020N10N5LFATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB020N10N5LFATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB020N10N5LFATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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