MOSFET P-CH 55V 31A IPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 65mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 63 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB020N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
FDB2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |
|
SI7370ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
|
SI4435DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
|
STL6N2VH5STMicroelectronics |
MOSFET N-CH 20V POWERFLAT |
|
AOT296LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 9.5A/70A TO220 |
|
NDS336PRochester Electronics |
MOSFET P-CH 20V 1.2A SUPERSOT3 |
|
CSD18503Q5ATexas Instruments |
MOSFET N-CH 40V 19A/100A 8VSON |
|
HUF76609D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A TO252AA |
|
FQI1P50TURochester Electronics |
MOSFET P-CH 500V 1.5A I2PAK |
|
AUIRFR3607TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
UF3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |