MOSFET N-CH 40V 30A PPAK SO-8
IC FLASH 512MBIT PARALLEL 64FBGA
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1160 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 4.8W (Ta), 41.7W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDS8840NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18.6A 8SOIC |
|
NP100P06PDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 100A TO263 |
|
IPB060N15N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 136A TO263-7 |
|
QS6U24TRROHM Semiconductor |
MOSFET P-CH 30V 1A TSMT6 |
|
IPD60R950C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO252-3 |
|
NP100P04PLG-E1-AYRenesas Electronics America |
MOSFET P-CH 40V 100A TO263 |
|
SI4196DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 8A 8SO |
|
AUIRLS3036-7PIR (Infineon Technologies) |
MOSFET N-CH 60V 240A D2PAK |
|
IRFR48ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
STN3N45K3STMicroelectronics |
MOSFET N-CH 450V 600MA SOT223 |
|
IPN70R600P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A SOT223 |
|
SCTWA35N65G2VAGSTMicroelectronics |
TRANS SJT N-CH 650V 45A TO247 |
|
IXFH70N30Q3Wickmann / Littelfuse |
MOSFET N-CH 300V 70A TO247AD |