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NP100P06PDG-E1-AY

NP100P06PDG-E1-AY

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Part No :

NP100P06PDG-E1-AY

Manufacturer
Renesas Electronics America
Description
MOSFET P-CH 60V 100A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
611061 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
NP100P06PDG-E1-AY PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 200W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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