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SIT1602BI-81-30N-7.372800Y

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MEMS OSC XO 7.3728MHZ H/LV-CMOS

SI4196DY-T1-GE3

SI4196DY-T1-GE3

MOSFET N-CH 20V 8A 8SO

SI4196DY-T1-GE3

SI4196DY-T1-GE3

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Part No :

SI4196DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 8A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
661066 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SI4196DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:27mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 4.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4196DY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI4196DY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4196DY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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