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IRF8010PBF

IRF8010PBF

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Part No :

IRF8010PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 80A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
810981 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
IRF8010PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3830 pF @ 25 V
FET Feature:-
Power Dissipation (Max):260W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF8010PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF8010PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF8010PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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