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ERJ-1GNF6813C

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TPH2R306NH,L1Q

TPH2R306NH,L1Q

MOSFET N-CH 60V 60A 8SOP

TPH2R306NH,L1Q

TPH2R306NH,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPH2R306NH,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 60A 8SOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
930993 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
TPH2R306NH,L1Q PDF
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.6W (Ta), 78W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
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