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IPP80N06S207AKSA1

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Part No :: IPP80N06S207AKSA1

Manufacturer: Rochester Electronics

Description: MOSFET N-CH 55V 80A TO220-3-1

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 19500 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 13 - Nov 17 2025

PDF: IPP80N06S207AKSA1 PDF

Type	Description
Series:	OptiMOS™
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	6.6mOhm @ 68A, 10V
Vgs(th) (Max) @ Id:	4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:	110 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3.4 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3-1
Package / Case:	TO-220-3

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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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