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SIT8208AI-G1-25E-6.000000Y

SIT8208AI-G1-25E-6.000000Y

MEMS OSC XO 6.0000MHZ LVCM LVTTL

IPB47N10SL26ATMA1

IPB47N10SL26ATMA1

MOSFET N-CH 100V 47A TO263-3

70005CS

70005CS

COMP O= .057,L= .44,W= .006

IPB47N10SL26ATMA1

IPB47N10SL26ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB47N10SL26ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 47A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10657 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 09 - Nov 13 2025
PDF
IPB47N10SL26ATMA1 PDF
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):175W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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