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FQA9N50

FQA9N50

MOSFET N-CH 500V 9.6A TO3P

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FQA9N50

FQA9N50

Image is for reference, please contact us to get the real picture

Part No :

FQA9N50

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 9.6A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
330833 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 09 - Nov 13 2025
PDF
FQA9N50 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:9.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.45 pF @ 25 V
FET Feature:-
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
FQA9N50 is available at GangBo-ic.com, Please review product page below for detailed information, including FQA9N50 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQA9N50 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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