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IPN70R2K1CEATMA1

IPN70R2K1CEATMA1

MOSFET N-CHANNEL 750V 4A SOT223

IPN70R2K1CEATMA1

IPN70R2K1CEATMA1

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Part No :

IPN70R2K1CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CHANNEL 750V 4A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
350835 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPN70R2K1CEATMA1 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):750 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:163 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:SOT-223-3
IPN70R2K1CEATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN70R2K1CEATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN70R2K1CEATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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