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IPA60R199CPXKSA1

IPA60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-FP

R542-000-162

R542-000-162

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IPA60R199CPXKSA1

IPA60R199CPXKSA1

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Part No :

IPA60R199CPXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 16A TO220-FP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
410841 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPA60R199CPXKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 100 V
FET Feature:-
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
IPA60R199CPXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA60R199CPXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA60R199CPXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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