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RCJ081N20TL

RCJ081N20TL

MOSFET N-CH 200V 8A LPTS

RCJ081N20TL

RCJ081N20TL

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Part No :

RCJ081N20TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 8A LPTS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10926 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
RCJ081N20TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:770mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.56W (Ta), 40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LPTS
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RCJ081N20TL is available at GangBo-ic.com, Please review product page below for detailed information, including RCJ081N20TL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RCJ081N20TL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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