MOSFET N-CH 30V 25A 8WPAK
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 11.1mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 6.8 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1.01 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WPAK |
Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIJA58DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IRF620BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220FP |
|
IPB80N03S4L02ATMA1Rochester Electronics |
MOSFET N-CH 30V 80A TO263-3-2 |
|
NP109N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 110A TO263 |
|
TK560P60Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 600V 7A DPAK |
|
SI2316DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
RJK0702DPP-E0#T2Rochester Electronics |
MOSFET N-CH 75V 90A TO220FP |
|
CSD17483F4TTexas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |
|
IPC100N04S51R9ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
IPA65R225C7Rochester Electronics |
IPA65R225 - 650V AND 700V COOLMO |
|
TPIC5424LDWRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP2N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2A TO220-3 |