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BSB104N08NP3GXUSA1

BSB104N08NP3GXUSA1

MOSFET N-CH 80V 13A/50A 2WDSON

006232023104800+

006232023104800+

FPC 1.0MM

BSB104N08NP3GXUSA1

BSB104N08NP3GXUSA1

Image is for reference, please contact us to get the real picture

Part No :

BSB104N08NP3GXUSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 13A/50A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
330633 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 14 - Feb 18 2025
PDF
BSB104N08NP3GXUSA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
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