MOSFET N-CH 650V 6A TO252-3
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 9 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 363 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTY2N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 2A TO252 |
|
RSC002P03T316ROHM Semiconductor |
MOSFET P-CH 30V 250MA SST3 |
|
PSMN1R6-30PL,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
PSMN2R6-60PSQ127Rochester Electronics |
MOSFET N-CH 60V 150A TO220AB |
|
SIRA90ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 71A/334A PPAK |
|
TJ60S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A DPAK |
|
AOT4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220 |
|
CEDM8004 BK PBFREECentral Semiconductor |
MOSFET P-CH 30V 450MA SOT883 |
|
IPD50P03P4L11ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 50A TO252-3 |
|
FQN1N50CBURochester Electronics |
MOSFET N-CH 500V 380MA TO92-3 |
|
APT11N80BC3GRoving Networks / Microchip Technology |
MOSFET N-CH 800V 11A TO247 |
|
IRLI520GPBFVishay / Siliconix |
MOSFET N-CH 100V 7.2A TO220-3 |
|
IPP60R190E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-3 |