MOSFET P-CH 40V 60A DPAK
Type | Description |
---|---|
Series: | U-MOSVI |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 6.3mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 125 nC @ 10 V |
Vgs (Max): | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6510 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 90W (Tc) |
Operating Temperature: | 175°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK+ |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOT4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220 |
|
CEDM8004 BK PBFREECentral Semiconductor |
MOSFET P-CH 30V 450MA SOT883 |
|
IPD50P03P4L11ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 50A TO252-3 |
|
FQN1N50CBURochester Electronics |
MOSFET N-CH 500V 380MA TO92-3 |
|
APT11N80BC3GRoving Networks / Microchip Technology |
MOSFET N-CH 800V 11A TO247 |
|
IRLI520GPBFVishay / Siliconix |
MOSFET N-CH 100V 7.2A TO220-3 |
|
IPP60R190E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-3 |
|
DMN3024SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.5A PWRDI3333-8 |
|
BUK7Y25-80E/GF115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVD5484NLT4GRochester Electronics |
10.7A, 60V, 0.017OHM, N-CHANNEL |
|
NTP85N03GRochester Electronics |
MOSFET N-CH 28V 85A TO220AB |
|
STP140N8F7STMicroelectronics |
MOSFET N-CH 80V 90A TO220 |
|
BUK6215-75C,118-NEXRochester Electronics |
MOSFET N-CH 75V 57A DPAK |