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SIRA90ADP-T1-GE3

SIRA90ADP-T1-GE3

MOSFET N-CH 30V 71A/334A PPAK

MSRTA200120(A)D

MSRTA200120(A)D

DIODE GEN 1.2KV 200A 3 TOWER

SIRA90ADP-T1-GE3

SIRA90ADP-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIRA90ADP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 71A/334A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12710 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:71A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:0.78mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:195 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:9120 pF @ 15 V
FET Feature:-
Power Dissipation (Max):6.3W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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