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IXFT18N100Q3

IXFT18N100Q3

MOSFET N-CH 1000V 18A TO268

IXFT18N100Q3

IXFT18N100Q3

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Part No :

IXFT18N100Q3

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 18A TO268
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10930 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
IXFT18N100Q3 PDF
Type Description
Series:HiPerFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4890 pF @ 25 V
FET Feature:-
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFT18N100Q3 is available at GangBo-ic.com, Please review product page below for detailed information, including IXFT18N100Q3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFT18N100Q3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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