MOSFET N-CH 900V 21A ISOPLUS247
Type | Description |
---|---|
Series: | HiPerFET™, PolarP2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 230mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 230 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 14000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PH9030AL115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
DMPH4015SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 40V 11.4A 8SO |
|
STF2HNK60ZSTMicroelectronics |
MOSFET N-CH 600V 2A TO220FP |
|
NDD60N360U1-35GRochester Electronics |
MOSFET N-CH 600V 11A IPAK |
|
NTMS5835NLR2GRochester Electronics |
MOSFET N-CH 40V 9.2A 8SOIC |
|
EMH2801-TL-HRochester Electronics |
MOSFET P-CH 20V 3A 8EMH |
|
FDP14AN06LA0Rochester Electronics |
MOSFET N-CH 60V 10A/67A TO220-3 |
|
FCP9N60NRochester Electronics |
MOSFET N-CH 600V 9A TO220-3 |
|
SUM60N10-17-E3Vishay / Siliconix |
MOSFET N-CH 100V 60A TO263 |
|
IXFH320N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 320A TO247AD |
|
IRF840LCSTRRPBFVishay / Siliconix |
MOSFET N-CH 500V 8A TO263AB |
|
FDFS6N548Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7A 8SOIC |
|
SIHA5N80AE-GE3Vishay / Siliconix |
E SERIES POWER MOSFET THIN-LEAD |