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FCP9N60N

FCP9N60N

MOSFET N-CH 600V 9A TO220-3

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FCP9N60N

FCP9N60N

Image is for reference, please contact us to get the real picture

Part No :

FCP9N60N

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 9A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
38208 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
FCP9N60N PDF
Type Description
Series:SuperMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.24 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FCP9N60N is available at GangBo-ic.com, Please review product page below for detailed information, including FCP9N60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCP9N60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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