MOSFET N-CH 30V 7A 8SOIC
CMC 260MA 2LN 600 OHM SMD
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 23mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 15 V |
FET Feature: | Schottky Diode (Isolated) |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHA5N80AE-GE3Vishay / Siliconix |
E SERIES POWER MOSFET THIN-LEAD |
|
IPB80N06S405ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO263-3 |
|
SIHP11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A TO220AB |
|
IRF3710STRRPBFRochester Electronics |
PFET, 57A I(D), 100V, 0.023OHM, |
|
UPA2780GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFA130N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 130A TO263 |
|
APT66M60LRoving Networks / Microchip Technology |
MOSFET N-CH 600V 70A TO264 |
|
FQB27N25TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPD04N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO252-3 |
|
IPB029N06N3GE8187ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A D2PAK |
|
NTTFS4928NTWGRochester Electronics |
MOSFET N-CH 30V 7.3A/37A 8WDFN |
|
SQJQ100EL-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
|
STP16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220 |