MOSFET N-CH 200V 18A TO263
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 70 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 130W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D²Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFA130N10TWickmann / Littelfuse |
MOSFET N-CH 100V 130A TO263 |
|
AUIRF7665S2TRRochester Electronics |
AUTOMOTIVE DIRECTFET N CHANNEL |
|
SIHP15N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 13A TO220AB |
|
APT50M65JLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
NVMYS3D3N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A/133A 4LFPAK |
|
IPB160N04S203ATMA1Rochester Electronics |
MOSFET N-CH 40V 160A TO263-7-3 |
|
NTK3134NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT723 |
|
UPA2709GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVF3055L108T3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
IXFT30N50PWickmann / Littelfuse |
MOSFET N-CH 500V 30A TO268 |
|
IPA90R1K2C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.1A TO220-FP |
|
NVMFS5C410NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 48A/315A 5DFN |
|
BSC16DN25NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 10.9A TDSON-8-5 |