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NVMYS3D3N06CLTWG

MOSFET N-CH 60V 26A/133A 4LFPAK

NVMYS3D3N06CLTWG

NVMYS3D3N06CLTWG

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Part No :

NVMYS3D3N06CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 26A/133A 4LFPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
292915000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.9W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-LFPAK
Package / Case:SOT-1023, 4-LFPAK
NVMYS3D3N06CLTWG is available at GangBo-ic.com, Please review product page below for detailed information, including NVMYS3D3N06CLTWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMYS3D3N06CLTWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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