MOSFET N-CH 900V 5.1A TO220-FP
GEARMOTOR 18 RPM 24V
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 710 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 31W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS5C410NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 48A/315A 5DFN |
|
BSC16DN25NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 10.9A TDSON-8-5 |
|
FDS9431A-F085Rochester Electronics |
MOSFET P-CH 20V 3.5A 8SOIC |
|
NTD6415ANLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 23A DPAK |
|
SIR172ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8 |
|
SIHB11N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 12A D2PAK |
|
HUFA76445S3SRochester Electronics |
MOSFET N-CH 60V 75A D2PAK |
|
SI2374DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 4.5A/5.9A SOT23 |
|
STP14NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A TO220AB |
|
CSD13383F4TTexas Instruments |
MOSFET N-CH 12V 2.9A 3PICOSTAR |
|
IPL60R1K5C6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3A THIN-PAK |
|
IRF9Z10PBF-BE3Vishay / Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
|
BSS192,135Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |