MOSFET N-CH 500V 9A TO262-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 399mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 330µA |
Gate Charge (Qg) (Max) @ Vgs: | 23 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 890 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFK320N17T2Wickmann / Littelfuse |
MOSFET N-CH 170V 320A TO264AA |
|
AOW29S50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 29A TO262 |
|
IRF644PBF-BE3Vishay / Siliconix |
MOSFET N-CH 250V 14A TO220AB |
|
SI4378DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 19A 8SO |
|
IPP60R145CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
RUS100N02TBROHM Semiconductor |
MOSFET N-CH 20V 10A 8SOP |
|
IRLR6225PBFRochester Electronics |
MOSFET N-CH 20V 100A DPAK |
|
SIHD3N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
PMXB65ENEZNexperia |
MOSFET N-CH 30V 3.2A DFN1010D-3 |
|
UF3SC065007K4SUnitedSiC |
MOSFET N-CH 650V 120A TO247-4 |
|
BSD314SPEL6327Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM3K336R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3A SOT23F |
|
BUK7D36-60EXNexperia |
MOSFET N-CH 60V 5.5A/14A 6DFN |