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AOW29S50

AOW29S50

MOSFET N-CH 500V 29A TO262

Q-2V03H0003009I

Q-2V03H0003009I

SMA-SJ/SMB-RJB G174 9I

AOW29S50

AOW29S50

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Part No :

AOW29S50

Manufacturer
Alpha and Omega Semiconductor, Inc.
Description
MOSFET N-CH 500V 29A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
679767 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
AOW29S50 PDF
Type Description
Series:aMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1312 pF @ 100 V
FET Feature:-
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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