RES SMD 2.05M OHM 1% 1/4W 1206
CAP TANT 10UF 10% 25V 2312
MOSFET N-CH 30V 3.2A DFN1010D-3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 67mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 295 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 400mW (Ta), 8.33W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN1010D-3 |
Package / Case: | 3-XDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UF3SC065007K4SUnitedSiC |
MOSFET N-CH 650V 120A TO247-4 |
|
BSD314SPEL6327Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM3K336R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3A SOT23F |
|
BUK7D36-60EXNexperia |
MOSFET N-CH 60V 5.5A/14A 6DFN |
|
BSS119L6433Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSC090N03MSGRochester Electronics |
BSC090N03 - 12V-300V N-CHANNEL P |
|
SISC06DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 27.6A/40A PPAK |
|
RJK03M8DNS-00#J5Rochester Electronics |
MOSFET N-CH 30V 30A 8HWSON |
|
FQI11P06TURochester Electronics |
MOSFET P-CH 60V 11.4A I2PAK |
|
FQB55N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 55A D2PAK |
|
STU6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A IPAK |
|
IXTT24P20Wickmann / Littelfuse |
MOSFET P-CH 200V 24A TO268 |
|
AO7400Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 1.7A SC70-3 |