MOSFET N-CH 60V 7A/36A TO252AA
DIMENSION= 12 X 65 MM, STYLE=M12
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta), 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 26mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 800 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPN6R003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 27A 8TSON-ADV |
|
DMN10H700S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 700MA SOT23 |
|
MTW8N50ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPI08N80C3XKSA1Rochester Electronics |
MOSFET N-CH 800V 8A TO262-3-1 |
|
RS1E240GNTBROHM Semiconductor |
MOSFET N-CH 30V 24A 8HSOP |
|
FDS8876Rochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
IXFP130N15X3Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO220AB |
|
STD5NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 4.4A DPAK |
|
FDS6990SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CMS06N10V8-HFComchip Technology |
MOSFET N-CH 100V 6.8A 8PDFN |
|
PMT560ENEAXNexperia |
MOSFET N-CH 100V 1.1A SOT223 |
|
BUK7504-40A,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
RD3L220SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 22A TO252 |