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TPN6R003NL,LQ

TPN6R003NL,LQ

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TPN6R003NL,LQ

TPN6R003NL,LQ

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Part No :

TPN6R003NL,LQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 30V 27A 8TSON-ADV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
019601 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
TPN6R003NL,LQ PDF
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 15 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 32W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
TPN6R003NL,LQ is available at GangBo-ic.com, Please review product page below for detailed information, including TPN6R003NL,LQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPN6R003NL,LQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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