RES 887 OHM 1% 1/4W 1206
MOSFET N CH 30V 27A 8TSON-ADV
BOX S STEEL NATURAL 16"L X 16"W
Type | Description |
---|---|
Series: | U-MOSVIII-H |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta), 32W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN10H700S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 700MA SOT23 |
|
MTW8N50ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPI08N80C3XKSA1Rochester Electronics |
MOSFET N-CH 800V 8A TO262-3-1 |
|
RS1E240GNTBROHM Semiconductor |
MOSFET N-CH 30V 24A 8HSOP |
|
FDS8876Rochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
IXFP130N15X3Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO220AB |
|
STD5NK50ZT4STMicroelectronics |
MOSFET N-CH 500V 4.4A DPAK |
|
FDS6990SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CMS06N10V8-HFComchip Technology |
MOSFET N-CH 100V 6.8A 8PDFN |
|
PMT560ENEAXNexperia |
MOSFET N-CH 100V 1.1A SOT223 |
|
BUK7504-40A,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
RD3L220SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 22A TO252 |
|
TK160F10N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 160A TO220SM |