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SPI08N80C3XKSA1

SPI08N80C3XKSA1

MOSFET N-CH 800V 8A TO262-3-1

SPI08N80C3XKSA1

SPI08N80C3XKSA1

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Part No :

SPI08N80C3XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 8A TO262-3-1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
21500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SPI08N80C3XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.1 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
SPI08N80C3XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPI08N80C3XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPI08N80C3XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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