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FDB20AN06A0

FDB20AN06A0

MOSFET N-CH 60V 9A/45A TO263AB

PLA1G221H14

PLA1G221H14

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FDB20AN06A0

FDB20AN06A0

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Part No :

FDB20AN06A0

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 9A/45A TO263AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15810 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FDB20AN06A0 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 25 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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