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NTD110N02RT4G

NTD110N02RT4G

MOSFET N-CH 24V 12.5A/110A DPAK

NTD110N02RT4G

NTD110N02RT4G

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Part No :

NTD110N02RT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 24V 12.5A/110A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
9055000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
NTD110N02RT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):24 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3440 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
NTD110N02RT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NTD110N02RT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTD110N02RT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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