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BSC028N06NSSCATMA1

BSC028N06NSSCATMA1

MOSFET N-CH 60V 100A TDSON

BSC028N06NSSCATMA1

BSC028N06NSSCATMA1

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Part No :

BSC028N06NSSCATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13915 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3375 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
BSC028N06NSSCATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC028N06NSSCATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC028N06NSSCATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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