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FQP13N10

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Part No :: FQP13N10

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 100V 12.8A TO220-3

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 10273 pieces

Shipped from: HK warehouse

Expected Shipping Date: Feb 18 - Feb 22 2025

PDF: FQP13N10 PDF

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	450 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	65W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

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