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NTLJF4156NTAG

NTLJF4156NTAG

POWER FIELD-EFFECT TRANSISTOR, 2

NTLJF4156NTAG

NTLJF4156NTAG

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Part No :

NTLJF4156NTAG

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
NTLJF4156NTAG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:427 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):710mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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