MOSFET N-CH 500V 20A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 210 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 280W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMT4008LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 12.8A 8SO |
|
SQJ418EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 48A PPAK SO-8 |
|
NTLJF4156NTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
STH180N10F3-6STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
|
NTGS1135PT1GRochester Electronics |
MOSFET P-CH 8V 4.6A 6TSOP |
|
NTGS3446T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2.5A 6TSOP |
|
STB11NM60T4STMicroelectronics |
MOSFET N-CH 650V 11A D2PAK |
|
SISS30LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 16A/55.5A PPAK |
|
IRFBC30ASPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
TMOSP12034Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFX32N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 32A PLUS247-3 |
|
FDS3570Rochester Electronics |
MOSFET N-CH 80V 9A 8SOIC |
|
IRFS7437TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |