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R6012ANX

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Part No :: R6012ANX

Manufacturer: ROHM Semiconductor

Description: MOSFET N-CH 600V 12A TO220FM

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 618661 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 25 - Nov 29 2024

PDF: R6012ANX PDF

Type	Description
Series:	-
Package:	Bulk
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1300 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	50W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220FM
Package / Case:	TO-220-3 Full Pack

R6012ANX is available at GangBo-ic.com, Please review product page below for detailed information, including R6012ANX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6012ANX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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