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RCD100N19TL

RCD100N19TL

MOSFET N-CH 190V 10A CPT3

RCD100N19TL

RCD100N19TL

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Part No :

RCD100N19TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 190V 10A CPT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11163 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
RCD100N19TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):190 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):850mW (Ta), 20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:CPT3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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